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To demonstrate our method – we fabricate a tri-band power amplifier that can work at 1 GHz – 1.5 GHz – and 2.5 GHz concurrently. We also propose a new simplified output matching network by using bias line to match the output impedance to reduce the number of resonators. With our proposed frequency selection element – we can use the conventional L-type structure to design matching network for three frequencies so that the design analysis procedure is easier. By applying this frequency selection element in both input and output matching networks constructed with microstrip line – tri-band matching network is realized. Two parallel resonators in series as one frequency selection element are used for each operation frequency. By Zhebin Wang and Chan-Wang Park – This paper presents a novel method by using resonators in both input and output matching networks to design a tri-band GaN HEMT power amplifier.
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